Office | Centre for Advanced Studies in Electronics Science and Technology, University of Hyderabad, Gachibowli, Hyderabad, Telangana,500046 |
Personal web page | https://scholar.google.com/citations?user=ql4BfYQAAAAJ&hl=en&authuser=1 |
Qualification | Ph.D (MNNIT, Allahabad) |
Semiconductor Devices, Nanoscale Device modelling and simulation, VLSI Design (Analog)
Papers in Peer Reviewed Journals
1. Nilesh Anand Srivastava, Anjali Priya and Ram Awadh Mishra, Analog and Radio-frequency Performance of Hetero-Gate-Dielectric FDSOI MOSFET in Re-S/D Technology, Microelectronics Journal, 98, 104731, (2020), DOI: 10.1016/j.mejo.2020.104731
2. Nilesh Anand Srivastava, Anjali Priya and Ram Awadh Mishra, Design and Analysis of Nano-scaled SOI-MOSFET based Ring Oscillator Circuit for High Density ICs, Applied Physics A: Materials Science & Processing 125(8) (2019) 533. DOI: 10.1007/s00339-019-2828-x
3. Anjali Priya, Nilesh Anand Srivastava and Ram Awadh Mishra, Design of High Speed and Low-power Ring Oscillator Circuit in Recessed Source/Drain SOI Technology, ECS journal of Solid State Science & Technology 8(3) (2019) N47-N54. DOI: 10.1149/2.0061903jss
4. Anjali Priya, Nilesh Anand Srivastava and Ram Awadh Mishra, Design and Analysis of nano-scaled Recessed-S/D SOI MOSFET based Pseudo-NMOS Inverter for Low-power Electronics, Journal of Nanotechnology 2019 (4935073) (2019) 1-12. DOI: 10.1155/2019/4935073
5. Anjali Priya, Nilesh Anand Srivastava and Ram Awadh Mishra, Perspective of buried oxide thickness variation on Triple Metal-Gate (TMG) Recessed-S/D FD-SOI MOSFET, Advances in Electrical and Electronic Engineering 16(3) (2018) 380-387. DOI: 10.15598/aeee.v16i3.2797
6. Anjali Priya and Ram Awadh Mishra, A two dimensional analytical modeling of surface potential in triple metal gate (TMG) fully-depleted Recessed-Source/Drain (Re-S/D) SOI MOSFET, Superlattices and Microstructures 92 (2016) 316-329. DOI: 10.1016/j.spmi.2016.01.041
Papers in Conference/proceedings
1. Anjali Priya, Abhinav, Neha Agrawal, Sanjeev Rai and Ram Awadh Mishra, Thermal Stability Analysis of Graded Channel Dual Material Double Gate (GCDMDG) MOSFET for Analog Application, 3rd International Conference on VLSI, Communication and Signal Processing (VCAS-2020), October 9-11, 2020, Allahabad.
2. Nilesh Anand Srivastava, Anjali Priya and Ram Awadh Mishra, Performance Analysis of Gate-Stack Nano-scaled Recessed-S/D SOI-MOSFET for Analog Applications, 3rd International Conference on VLSI, Communication and Signal Processing (VCAS-2020), October 9-11, 2020, Allahabad.
3. Nilesh Anand Srivastava, Anjali Priya and Ram Awadh Mishra, Performance evaluation of Hetero-Gate-Dielectric Re-S/D SOI MOSFET for low Power Applications, 6th IEEE Uttar Pradesh Section International Conference (UPCON 2019), November 8-10, 2019, Aligarh.
4. Nilesh Anand Srivastava, Anjali Priya and Ram Awadh Mishra, Analog and Radio-frequency Performance of Hetero-Gate-Dielectric FD SOI MOSFET in Re-S/D Technology, 2nd International Conference on VLSI, Communication and Signal Processing (VCAS-2019), October 21-23, 2019, Allahabad.
5. Anjali Priya, Nilesh Anand Srivastava and Ram Awadh Mishra, Performance Investigation of Gate-Engineered Recessed-S/D FDSOI MOSFETs for Low Power Analog/RF Applications, 15th IEEE India Council International Conference (INDICON 2018), December 16-18, 2018, Coimbatore.
6. Anjali Priya, Nilesh Anand Srivastava and Ram Awadh Mishra, Impact of doping concentration on the performance of TMG Re-S/D FDSOI MOSFET, 5th IEEE Uttar Pradesh Section International Conference (UPCON 2018), November 2-4, 2018, Gorakhpur. DOI: 10.1109/UPCON.2018.8596870
7. Anjali Priya, Sanjeev Rai and Ram Awadh Mishra, Comparative analysis of Junctionless Bulk and SOI/SON FinFET, 4th IEEE International conference on Power, Control and Embedded System (ICPCES-2017), March 9-11, 2017 held at Allahabad. DOI: 10.1109/ICPCES.2017.8117647 ISBN: 978-1-5090-4426-9