CASEST

Admissions for M.Tech (IC Technology) and M.Tech (Microelectronics and VLSI design) announced. Interested applicants with a valid GATE score should apply directly to the University of Hyderabad. Please visit http://acad.uohyd.ac.in for details

centre for advanced studies in electronics science & technology

FACULTY DETAILS

Center for Advanced Studies in Electronics Science and Technology (CASEST)

Prof. Ghanashyam Krishna M (Head, CASEST)

Professor

OfficeCASEST, School of Physics, ,University of Hyderabad,Hyderabad,Telangana,500046
Personal web pagehttps://scholar.google.co.in/citations?user=8cx53RcAAAAJ&hl=en
QualificationPh.D. (IISc. Bangalore)
Phone: +91- 040- 23134832, E-mail: mgksp@uohyd.ernet.in 

Home Page

Education

Ph.D., Department of Instrumentation and Applied Physics, Indian Institute of Science, Bangalore – 1992

M.Sc. (Physics), University of Delhi – 1986

B.Sc. (Hons, Physics) University of Delhi  -1984

Professional Experience

Fellow: Andhra Pradesh and Telangana Academy of Sciences.

Member: National Academy of Sciences India, Allahabad, India.

Visiting Academic (for short term visits): Department of Engineering Sciences, University of Oxford, UK and Department of Physics, University of Trento, Italy.

Associate Editor: Bulletin of Materials Science (published by Springer for Indian Academy of Sciences, Bangalore) since 2011.

Research Areas

Electronic, optical and optoelectronic applications of thin films, nanostructured materials, sensors.

Member of Professional Bodies

  • 1996-2001 Senior/Research Fellow, Warwick Manufacturing group, University of Warwick, UK
  • 2001-2004 Lecturer, School of Physics, University of Hyderabad
  • 2004-2010 Reader/ Associate Professor, School of Physics, University of Hyderabad
  • 2010-2015 Professor, School of Physics, University of Hyderabad
  • 2015- to date Professor, Centre for Advanced Studies in Electronics Science and Technology, School of Physics, University of Hyderabad

Sponsored / Consultancy Projects

  1. Development of a ultra high temperature sensor for space applications: Funded by ISRO (Govt. of India) under the RESPOND programme (2003-2005):
  2. Studies on nanocrystalline oxide thin films prepared on textured surfaces. Joint collaborative Research programme with University of Warwick, UK Funded by UOW (2003-2007).
  3. Research and development on active and bulk planar waveguides based on nanostructured glassy systems Funded by DST-ITPAR Phase I (India-Trento Program on Advanced Research in collaboration with University of Trento, Italy(Co-investigator). (2004-2007)
  4. Development of space qualified High Tc thin films for microwave applications , Funded by ISRO (Govt. of India) under the RESPOND programme (2004-2008).
  5. Development of Ferroelectric thin films for RF MEMS applications (National Program on Smart Materials) (Co-PI) (2004-2008).
  6. Development of ferroelectric thin films for microwave phase shifter and tunable filter applications (Co-PI) (Funded by DLRL, Hyderabad, India) (2004-2008).
  7. Studies on physical properties of new nanocomposite materials (Funded under the DST-ITPAR program in collaboration with University of Trento, Italy.) Phase II 2008-2011 (PI Prof. A K Bhatnagar, Co-PI: Dr M Ghanashyam Krishna) Total funding ~Rs100 lakhs
  8. Fabrication of superhard nanocomposite titanium nitride-silicon nitride based coatings for erosion and corrosion resistance (Funded by DRDO 2012-16) PI: Dr M Ghanashyam Krishna, Co-PI: Prof. K A Padmanabhan, Total funding: Rs 67.60 lakhs.

Students

Current Students

  • R. Tirupathi
  • M. Rahul
  • Y. Rajesh
  • A. Sivarama Krishna
  • S. K. Padhi

Alumni

  • Dr. K Uma Mahendra Kumar (Currently at VIT, Chennai)
  • Dr. Prashant Kumar (Currently at IIT Patna)
  • Dr. M S R N Kiran (Currently at SRM University, Chennai)
  • Dr. R Brahma (Currently at University of Bodoland)
  • Dr. K Vasu (Currently at VIT Chennai)
  • Dr. D. Rajesh (Currently in Israel)
  • Dr. K.L.Naidu (Currently in GITAM Vizag)
  • Dr. U.P. Shaikh (Currently at Vijayawada)
  • Dr. V.Shankernath (Currently at MITS, Madanapalle)
  • Dr. S.L.D.Varma (Currently at TIFR)
  • Dr. P.C. Akshara
  • Dr. D Pamu (Currently at IIT Guwahati)
  • Dr. K Sudheendran (Currently at Thrissur)
  • Dr. K Venkatasaravanan (Currently CUTN, Thiruvarur)
  • Dr. M.A.Mohiddon (Currently at SRM University, Sonepat)
  • Dr Sachin Kshirsagar
  • Dr. R.Vijaya Kumar (Currently at Guru Ghasidas Vishwavidyalaya-Central University, Bilaspur)

Current Collaborators from UoH

  • Prof. G Rajaram
  • Prof. S L Sabat
  • Prof. S V S Nageswara Rao
  • Prof. S Venugopal Rao

External Collaborators

  • Prof. V. Madhurima (CUTN, Thiruvarur, Tamil Nadu, India)
  • Dr. Debarun Dhar Purkayastha (NIT, Nagaland)
  • Dr. R. Praveena (GVPCoE, Vizag)

Publications and Patents

Total refereed Publications: 152 Patents: 3, (1 European, 1 US and 1 Indian)

Journal Publications (since 2005)

  • M. Durga Prasad, M. Ghanashyam Krishna, S.K. Batabyal, Silver Bismuth Iodide Nanomaterials as Lead-Free perovskite for Visible Light Photodetection, ACS Applied Nanomaterials (2021, in press).
  • P.C. Akshara, G. Rajaram, M. Ghanashyam Krishna, Characteristics of 21H-SiC Thin Film-Based Schottky Barrier Diodes Using TiN Contacts, Journal of Electronic Materials (2021)
  • Y. Rajesh, D.D. Purkayastha, M. Ghanashyam, Seed layer mediated wettability and wettability transition of ZnO nano/micro rod arrays, Journal of Alloys and Compounds, 857,157617 (2021).
  • Y.Rajesh, S K Padhi, M. Ghanashyam Krishna, ZnO thin film-nanowire array homo-structures with tunable photoluminescence and optical band gap, RSC Advances, 10, 25721(2020).
  • P C Akshara, N. Basu, J.Lahiri, G. Rajaram, M. Ghanashyam Krishna, Electric Field Induced Dissociation of SiC Thin Films Leading to the Formation of Nanocrystalline Graphite, Electronic Materials Letters(2020) doi:10.1007/s13391-020-00204-5
  • P C Akshara, N. Basu, J.Lahiri, G. Rajaram, M. Ghanashyam Krishna, Resistive switching in amorphous SiC films deposited by composite single target magnetron sputter deposition, Bulletin of Materials Science, 43 (1)(2020) 
  • LDV Sangani, MA Mohiddon, G Rajaram, M Ghanashyam Krishna, Optical confinement in TiO2 waveguides fabricated by resist free electron beam lithography, Optics and Laser Technology 123, 105901 (2020). 
  • D. Upadhaya, Debarun Dhar Purkayastha, M Ghanashyam Krishna, Dependence of calcination temperature on wettability and photocatalytic performance of SnO2–TiO2 composite thin films,  Materials Chemistry and Physics, 241, 122333 (2020). 
  • Muvva D Prasad, M Ghanashyam Krishna,; Sudip K Batabyal, Structure Engineered Two-Dimensional Layered BiOI Surfaces as a “Dip Photocatalyst” for Photocatalytic Reaction, Crystal Growth and Design 20 (8), 4909(2019). 
  • Muvva D Prasad, M Ghanashyam Krishna, Sudip K Batabyal, Facet-Engineered Surfaces of Two-Dimensional Layered BiOI and Au–BiOI Substrates for Tuning the Surface-Enhanced Raman Scattering and Visible Light, ACS Applied Nanomaterials, 2, 6, 3906-3915 (2019).
  • LDV Sangani, M Ghanashyam Krishna,  Oxygen Affinity of Metal Electrodes as Control Parameter in Tuning the Performance of CuxO Based Resistive Random Access Memory Devices, Physica Status Solidi A, 216, 1900392, (2019). 
  • V Shankernath, K Lakshun Naidu, M Ghanashyam Krishna, K A Padmanabhan, Optical properties of magnetron sputtered nanocrystalline gold nitride thin films, Materials Research Express, 6, 094001 (2019). 
  • SK Padhi, MG Krishna,Non-Classical Crystal Growth Recipe using nanocrystalline ceria a detailed review,  arXiv preprint arXiv:1911.07454 (2019).
  • N. Paul, D.D. Purkayastha, M Ghanashyam Krishna TiO2/SnO2 and SnO2/TiO2 heterostructures as  photocatalysts for degradation of stearic acid and methylene blue under UV irradiation, Superlattices and Microstructures, 129, 105-114 (2019). 
  • R.Praveena, V Sravani Sameera, Md Ahamad Mohiddon, M Ghanashyam Krishna, Surface plasmon resonance, photoluminescence and surface enhanced Raman scattering behaviour of Ag/ZnO, ZnO/Ag and ZnO/Ag/ZnO thin films, Physica B, 555, 118-124 (2019).
  • R Praveena, V Sravani Sameera, NV Prabhakara Rao Thirumala, CS Sunandana, M Ghanashyam Krishna, Effect of pre-annealing on the structural evolution and optical response of Ag films exposed to iodine vapours, Bulletin of Materials Science, 41, 89 (2018).
  • Muvva D Prasad, LD Varma Sangani, Sudip K Batabyal, M Ghanashyam Krishna, Single and twinned plates of 2D layered BiI3 for use as nanoscale pressure sensors, Crystal Engineering Communications, 20, 4857 -4866 (2018).
  • Talinungsang, D.D. Purkayastha, M Ghanashyam Krishna Dopant controlled photoinduced hydrophilicity and photocatalytic activity of SnO2 thin films, Applied Surface Science 447, 724 (2018).
  • P.C.Akshara, G. Rajaram, M. Ghanashyam Krishna, Single composite target magnetron sputter deposition of crystalline and amorphous SiC thin films, Materials Research Express, 5(3) 036410, (2018)
  • S Rowtu, LDV Sangani, MG Krishna, The Role of Work Function and Band Gap in Resistive Switching Behaviour of ZnTe Thin Films, Journal of Electronic Materials, 47(2) 1620-1629 (2018)
  • S Vanapalli, KL Naidu, MG Krishna, KA Padmanabhan, Growth and mechanical properties of TiN-AuN2 nanocomposite thin films on IN718 alloy substrates, Materials Letters 210, 101-104(2018)
  • Praveena Ravipati S. Sameera Vanjarana Debarun D. Purkayastha, M. Ghanashyam Krishna, Iodization?Induced Reversible Wettability in Nanostructured Ag Films, Physica Status Solidi A, 214 (111), 1700335 (2018)
  • V Shankernath, KL Naidu, M Ghanashyam Krishna, KA Padmanabhan, Optical response of ultra-thin titanium nitride films on brass and gold plated brass surfaces, Materials Research Bulletin 85, 121-130 (2017).
  • ASR Krishna, SL Sabat, M Ghanashyam Krishna, The design of broad band anti-reflection coatings for solar cell applications, The European Physical Journal: Applied Physics 77 (1), 10301 (2017).
  • MD Prasad, UP Shaik, V Madhurima, MG Krishna, Low temperature growth of ZnO nanostructures on flexible polystyrene substrates for optical, photoluminescence and wettability applications,Materials Research Express 3 (8), 085010 (2017).
  • SK Padhi, SN Gottapu, MG Krishna, Electron-beam irradiation induced transformation of Cu2(OH)3NO3 nanoflakes into nanocrystalline CuO, Nanoscale, 8,11194 (2016).
  • Ummar Pasha Shaik, Syed Hamad, Md. Ahamad Mohiddon, Venugopal Rao Soma, M.Ghanashyam Krishna, Morphologically manipulated Ag/ZnO nanostructures as surface enhanced Raman scattering probes for explosives detection, Journal of Applied Physics, 119 (9), 093103 (2016).
  • S L D Varma, Ch Ravi Kumar, M Ghanashyam Krishna, Interfacial electrode driven enhancement of the switching parameters of a copper oxide based Resistive Random access memory device, Journal of Electronic Materials, 45 (1), 322-328 (2016).
  • S L D Varma, M .A. Mohiddon, M Ghanashyam Krishna, Low temperature Au induced crystallization of Titanium dioxide thin films for Resistive switching applications, RSC Advances 5, 67493-67499 (2015) .
  • D. Dhar Purkayastha, M. Ghanashyam Krishna, V Madhurima, Effects of metal doping on photoinduced hydrophilicity of SnO2 thin films, Bulletin of Materials Science, 38, 203-208 (2015)
  • D.Rajesh, M Ghanashyam Krishna, C S Sunandana, Briefly iodized Ag foils: Microstructure, structure, optical response and potential as iodine detectors, Applied Physics A, 119, 1311-1316 (2015)
  • Ummar Pasha Shaik, D. Dhar Purkayastha, M. Ghanashyam Krishna, V Madhurima, Nanostructured Zn and ZnO nanowire thin films for mechanical and self-cleaning applications, Applied Surface Science, 330, 292-299(2015).
  • K Vasu, M Ghanashyam Krishna, K A Padmanabhan, Effects of elastic strain and diffusion-limited aggregation on morphological instabilities in sputtered nitride thin films,29, 1711-1720 (2014).
  • Ummar Pasha Shaik, M. Ghanashyam Krishna, Single step formation of indium and tin doped ZnO nanowires by thermal oxidation of indium–zinc and tin–zinc metal films: Growth and optical properties, Ceramics International, 40, 13611-136120 (2014).
  • K. Lakshun Naidu, M Ghanashyam Krishna, Effect of thermal annealing on disorder and optical properties of Cr/Si bilayer thin films, Philosophical Magazine, 94, 3431-3444 (2014).
  • M. D. Prasad, M.Ghanashyam Krishna, Facile Green Chemistry-Based Synthesis and Properties of Free-Standing Au and Ag-PMMA Films, ACS Sustainable Chemistry and Engineering, 2, 1453-1460 (2014).
  • D Dhar Purkayastha, V Madhurima, M Ghanashyam Krishna, Molybdenum doped tin oxide thin films for self-cleaning applications, Materials Letters, 124, 21-23 (2014).
  • Md. Ahamad Mohiddon, K. L. Naidu, M. Ghanashyam Krishna, G. Dalba, S. I. Ahmed and F. Rocca, Chromium oxide as a metal diffusion barrier layer: An x-ray absorption fine structure spectroscopy study, Journal of Applied Physics: 115 044315 1- 7 (2014).
  • Md. Ahamad Mohiddon, M. Ghanashyam Krishna, Effect of High Temperature Deposition on the Diffusion of Nickel in Amorphous Silicon Thin Films. Electronic Material Letters, 10, 713-718 (2014).
  • K Vasu, M Ghanashyam Krishna, K A Padmanabhan, Nanomechanical behavior of (1 0 0) oriented titanium thin films, The European Physical Journal Applied Physics 65 (03), 30302 (2014).
  • K Vasu, M Ghanashyam Krishna, K A Padmanabhan, Nb concentration dependent nanoscale electrical transport properties of granular Ti1-xNbxN thin films, Physica Status Solidi A,210, 1938-1943 (2013).
  • Md. Ahamad Mohiddon, L.D. Varma Sangani, M. Ghanashyam Krishna, Scanning near field optical microscopy of gold nano-disc arrays fabricated by electron beam lithography and their application as Surface enhanced Raman scattering substrates, Chemical Physics Letters: 588 160-166(2013).
  • Md. Ahamad Mohiddon, M. Ghanashyam Krishna, Crystallite size and film-substrate interface mediated structural evolution of silicon thin films, Journal of Physics and chemistry of solids: 741249-1253(2013).
  • M Ghanashyam Krishna, V Madhurima, D Dhar Purkayastha, Metal oxide thin films and nanostructures for self-cleaning applications: current status and future prospects, The European Physical Journal Applied Physics 62, 30001(12 pages) (2013).
  • K Vasu, M S R N Kiran, M Ghanashyam Krishna, K A Padmanabhan, Nitrogen deficiency and metal dopant induced sub-stoichiometry in titanium nitride thin films: a comparative study, International Journal of Materials Research (formerly: Zeitschrift fuer Metallkunde) 104, 879-884 (2013).
  • S D Kshirsagar, M Ghanashyam Krishna, S P Tewari, Optical characteristics of wurtzite ZnTe thin films, Materials Science in Semiconductor Processing 16, 1002-7(2013).
  • D Dhar Purkyastha, V Madhurima, M Ghanashyam Krishna, Metal buffer layer mediated wettability of nanostructured TiO2 films, Materials Letters, 92, 151-153 (2013).
  • S D Kshirsagar, U P Shaik, M Ghanashyam Krishna, Photoluminescence study of ZnO nanowires with Zn residue, Journal of Luminescence, 136, 26-31 (2013).
  • S D Kshirsagar, M Ghanashyam Krishna, S P Tewari, Photoinduced darkening, crystallization and reversible emission in ZnTe thin films, Applied Physics A, DOI 10.1007/s00339-012-7300-0 (2013).
  • Md. Ahamad Mohiddon, M Ghanashyam Krishna, Growth and optical properties of Sn-Si nanocomposite thin films, Journal of Materials Science, 49, 6972-6978 (2012).
  • S. Marka, Menaka, M Ghanashyam Krishna, A K Ganguli, Effect of substrate and film thickness on the growth, structure, mechanical and optical properties of chromium diboride thin films, Surface and Coatings Technology, 209, 23-31 (2012).
  • Md. Ahamad Mohiddon, M Ghanashyam Krishna, F Rocca, G Dalba, Transmission electron microscopy study of Ni-Si nanocomposite films, Materials Science and Engineering B, 177, 1108-1112 (2012).
  • R Brahma, M Ghanashyam Krishna, Interface controlled growth of nanostructures in discontinuous Ag and Au thin films fabricated by ion beam sputter deposition for plasmonic applications, Bulletin of Materials Science, 35, 551-560 (2012).
  • K Vasu, G M Gopikrishnan, M Ghanashyam Krishna, K A Padmanabhan, Optical reflectance, dielectric functions and phonon-vibrational modes of reactively sputtered Nb-substituted TiN thin films, Applied Physics A, 108, 993-1000 (2012).
  • M Ahamed Mohiddon, M Ghanashyam Krishna, Effect of bilayer geometry on the diffusion of Ni in amorphous Si and the consequent growth of silicides, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 30, 061203 (2012).
  • K. Sudheendran, M.K. Singh, M.Ghanshyam Krishna, and.K.C. J Raju, Microwave and optical properties of monoclinic Bi2Zn2/3Nb4/3O7 thin films Eur. Phys. J. Appl. Phys. 58, 10303 (2012).
  • Md. Ahamad Mohiddon, K. Lakshun Naidu, G. Dalba, F. Rocca and M. Ghanashyam Krishna, Cr induced nanocrystallization of a-Si thin films: its mechanism Phys. Status Solidi C, 1– 3 (2012) / DOI 10.1002/pssc.201100624
  • M A Mohiddon, K Lakshun Naidu, M Ghanashyam Krishna, G Dalba and F Rocca, Growth, optical and electrical properties of Silicon films produced by the metal induced crystallization process, Journal of Nanoparticle Research 13, 5999 (2012).
  • Ummar Pasha Shaik, , S.Kshirsagar, M. Ghanashyam Krishna, Surya P. Tewari, Debarun Dhar Purkayastha, Madhurima, V., Growth of superhydrophobic Zinc oxide nanowire thin films, Materials Letters, 75, 51-53, (2012 ).
  • Menaka Jha, Sandeep Marka, M. Ghanashyam Krishna, A.K.Ganguli, , Multifunctional nanocrystalline chromium boride thin films, Materials Letters, 73, 220-222,(2012).
  • K Vasu, M.Ghanashyam Krishna, K.A.Padmanabhan, Effect of Nb concentration on the optical and mechanical properties of Ti1-xNbxN thin films, Journal of Materials Science 47, 3522 (2012).
  • Menaka Jha, Sachin D. Kshirsagar, M. Ghanashyam Krishna, Ashok K.,Ganguli, Growth and optical properties of chromium borate thin films, Solid State Sciences, 13 (6), p.1334-1338, (2011).
  • R Brahma, G Mahipal Reddy, P Anantha Lakshmi, Suneel Singh, M Ghanashyam Krishna, Controlled nanostructuring of Ag films by low energy ion beam sputter deposition and its impact on surface plasmon resonance behaviour, Journal of Nanoscience and Nanotechnology 11, 6843-6851, (2011) .
  • M A Mohiddon, K Lakshun Naidu, M Ghanashyam Krishna, Nanocrystalline wurtzite Si –nickel silicide composite thin films with large band gap and high resistivity, Journal Materials Science, 46, 2672-2677 (2011).
  • K Vasu, M.Ghanashyam Krishna, K.A.Padmanabhan, Conductive-atomic force microscopy study of local electron transport in nanostructured titanium nitride thin films, Thin Solid Films 519, 7702-7706, (2011).
  • M.S.R.N. Kiran, M.Ghanashyam Krishna, K.A.Padmanabhan, Substrate dependent structure, microstructure, composition and properties of nanostructured TiN films, Solid State communications 151, 561-563, (2011).
  • R. Brahma, M.Ghanashyam Krishna, Optical behavior of silver/dielectric and gold/dielectric bilayer thin films, Physica E, 43, 1192-1198, (2011).
  • K Vasu, M.Ghanashyam Krishna, K.A.Padmanabhan, Substrate-temperature dependent structure and composition variations in RF magnetron sputtered titanium nitride thin films, Applied Surface Science 257, 3069 (2011).
  • M S R N Kiran, S Kshirsagar, M Ghanashyam Krishna and S P Tewari, Growth, optical and mechanical properties of (111) oriented ZnTe thin films, EPJ: Applied Physics 51,10502-9. (2010).
  • R. Brahma, M.Ghanashyam Krishna, Optical response and surface morphology of In/Ag bilayer thin films, Materials Chemistry and Physics, 124, 150(2010).
  • M. Ghanashyam Krishna, A.K. Kapoor, M.Durga Prasad, V.Srinivasan, An experimental criterion for the nano-to-bulk phase transition, Physica E: Low dimensional Systems and Nanostructures, 42, 1920 (2010).
  • K.Sudheendran, D. Pamu, M. Ghanashyam Krishna, K.C.James Raju, Determination of dielectric constant and loss of high-K thin films in the microwave frequencies, Measurement 43, 556 (2010).
  • K. Venkata Saravanan, M. Ghanashyam Krishna, K. C. James Raju, S P Tewari and S Venugopal Rao, Large three-photon absorption in BaSrTiO films studied using Z scan technique, Applied Physics Letters 96, 232905 (2010)
  • Pamu, D., Sudheendran, K, M.Ghanashyam Krishna, Raju, K.C.J., Dielectric properties of ambient temperature grown nanocrystalline ZrTiO4 thin films using DC magnetron sputtering, Materials Science and Engineering B 168, 208 (2010).
  • Prashant Kumar, M. Ghanashyam Krishna, A comparative study of laser- and electric-field-induced effects on the crystallinity, surface morphology and plasmon resonance of indium and gold thin films, Phys. Stat. Solidi (A),207, 947 (2010).
  • K. Venkata Saravanan, M. Ghanashyam Krishna, and K. C. James Raju, Effect of misfit strain and surface roughness on the tunable dielectric behavior of Ba0.5Sr0.5TiO3 thin films, J. Appl. Phys. 106, 114102 (2009).
  • Prashant Kumar, M. Ghanashyam Krishna and A. K. Bhattacharya, Effect of microstructural evolution on magnetic properties of Ni thin films, Bulletin of Materials Science Volume 32, 263-270 (2009).
  • Prashant Kumar, M Ghanashyam Krishna and A K Bhattacharya, Excimer Laser Induced Nanostructuring of Silicon Surfaces, Journal of Nanoscience and Nanotechnology, 9, 3224-3232 (2009).
  • K Venkata Saravanan, K Sudheendran, M Ghanashyam Krishna, K C James Raju , Effect of the amorphous-to-crystalline transition in Ba0.5Sr0.5TiO3 thin films on optical and microwave dielectric properties, Journal of Physics D: Applied Physics, 42 (4), 045401, (2009).
  • Pamu, D., Sudheendran, K, M.Ghanashyam Krishna, Raju, K.C.J., Bhatnagar,A.K. , Ambient temperature stabilization of crystalline zirconia thin films deposited by direct current magnetron sputtering, Thin Solid Films, 517, 1587-1591, ( 2009).
  • Koppolu Uma Mahendra Kumar, M Ghanashyam Krishna , Optical behaviour of ion beam sputtered a-Si thin films, Semiconductor Science and Technology, 23 (10), p.105020, (2008).
  • Prashant Kumar, M Ghanashyam Krishna and A K Bhattacharya, Electric-field induced nanostructuring of metallic thin films, International Journal of Nanoscience, 7, 255-261 (2008).
  • K Venkata Saravanan, K Sudheendran M. Ghanashyam Krishnaand K C James Raju, Effect of the amorphous- to- crystalline transition in Ba0.5Sr0.5TiO3 thin films on optical and microwave dielectric properties, Journal of Physics D: Applied Physics 42 045401-045407(2009).
  • K. Sudheendran , M. Ghanashyam Krishna, K. C. James Raju, Effect of process parameters and post-deposition annealing on the microwave dielectric and optical properties of pulsed laser deposited Bi 1.5Zn1.0Nb1.5O7 thin films, Applied Physics A: Materials Science and Processing 95 (2), pp. 485-492 (2009).
  • D. Pamu, K. Sudheendran, M. Ghanashyam Krishna, K. C. James Raju, A. K. Bhatnagar, Ambient temperature stabilization of crystalline zirconia thin films deposited by direct current magnetron sputtering, Thin Solid Films, 517 (5), pp. 1587-1591 (2009).
  • R. Grisenti, G. Dalba, P. Fornasini, F. Rocca, K. Uma Mahendra Kumar M. Ghanashyam Krishna XAFS study of Ni surroundings in metal induced crystallization of thin film amorphous silicon, Solid State Communications, 147 (9), pp. 401-404, (2008).
  • Prashant Kumar M. Ghanashyam Krishna, A. K. Bhatnagar , A. K. Bhattacharya, Template-assisted fabrication of nanowires, International Journal of Nanomanufacturing, 2( 5 ) 477-495 (2008).
  • M.S.R.N. Kiran, M. Ghanashyam Krishna, K.A. Padmanabhan, Interfacial engineering of nanostructured titanium nitride thin films, International Journal of Nanomanufacturing, 2(5) 420-441 (2008)
  • M.S.R.N. Kiran, M. Ghanashyam Krishna, K.A. Padmanabhan, Growth, surface morphology, optical properties and electrical resistivity of ε-TiNx (0.4 < x ≤ 0.5) films, Applied Surface Science, 255 , pp. 1934-1941 (2008)
  • K. S. Raju, M. Ghanashyam Krishna, K. A. Padmanabhan, K. Muraleedharan, N. P. Gurao, G. Wilde, Grain size and grain boundary character distribution in ultra-fine grained (ECAP) nickel, Materials Science and Engineering A 491 (1-2), pp. 1-7 (2008)
  • Prashant Kumar, M. Ghanashyam Krishna, A. K. Bhatnagar, A.K. Bhattacharya, Dynamic force microscopy study of the microstructural evolution of pulsed laser deposited ultrathin Ni and Ag films, Journal of Materials Research 23(7) 1826-1839 (2008)
  • D. Pamu, K.Sudheendran M. Ghanashyam Krishna, K.C.J. Raju, Optical and microwave characteristics of ambient temperature deposited zirconium tin titanate high-k films, EPJ Applied Physics 44 (1), pp. 71-75 (2008)
  • D.Pamu , K.Sudheendran, M. Ghanashyam Krishna, K.C. James Raju, Crystallographic texture, morphology, optical, and microwave dielectric properties of dc magnetron sputtered nanostructured zirconia thin films, Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 26 (2), pp. 185-192 (2008).
  • R Brahma M. Ghanashyam Krishna, Ion beam sputtered ultra-thin and nanostructured Ag films for surface plasmon applications, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 266, 1493-1497 (2008).
  • K. Uma Mahendra Kumar, M. Ghanashyam Krishna, Chromium induced nanocrystallization of a-Si thin films in to the wurtzite structure, Journal of Nanomaterials, vol. 2008, Article ID 736534 (2008).
  • K Uma Mahendra Kumar R Brahma, M. Ghanashyam Krishna and G Dalba, An Optical study of Ni induced crystallization of a-Si thin films, J Physics Condensed matter 19 (49),.496208, (2007) .
  • K. Venkata Saravanan, K.Sudheendran, and K.C.James Raju), Broadband microwave dielectric properties of BST thin films on quartz substrates, Ferroelectrics, 356, 156-165 (2007).
  • R Srinivasa Rao, M. Ghanashyam Krishna, Development of the electronics interface for the direct conversion of short-circuit current to temperature for use in rare earth selective emitter based temperature sensors, Journal of the Instrument Society of India 37 (3), 169(2007).
  • K. Venkata Saravanan, K.Sudheendran, M. Ghanashyam Krishna and K.C.James Raju, Structural, optical and microwave characteristics of sol-gel derived Barium Strontium Titanate thin films”, Materials Chemistry and Physics 105 (2), p.426-432, 2007
  • K. Venkata Saravanan, K.C.James Raju and Anil K Bhatnagar, Preparation and Characterization of Barium Strontium Titanate powder by a Modified Polymeric Precursor method, Journal of Materials Science 42, 1149 (2007).
  • N. Sathish, S. Dhamodaran, A.P. Pathak, M. Ghanashyam Krishna, S.A. Khan, D.K. Avasthi, A. Pandey, R. Muralidharan , G. Li, C. Jagadish, HRXRD, AFM and optical study of damage created by swift heavy ion irradiation in GaN epitaxial layers, Nuclear Instruments and Methods B, 256 (1), p.281-287, (2007).
  • Ayan Bhattacharya, R.Srinivasa Rao, M.Ghanashyam Krishna,, Characterization of Yb2O3 based optical temperature sensor for high temperature applications , Sensors and Actuators A: Physical, 134 (2), p.348-356, (2007).
  • Rajeeb Brahma, M Ghanashyam Krishna, A K Bhatnagar, Optical and electrical properties of Mn doped tin oxide thin films, Bulletin of Materials Science, (2006).
  • M.S.R.N. Kiran, K. Sudheendran, M. Ghanashyam Krishna, K.C. James Raju, Anil K. Bhatnagar, Chromium and nickel substituted iron oxide thin films by DC sputtering Vacuum 81 (1), 133-137, (2006).
  • M Ghanashyam Krishna, A K Kapoor, M Durga Prasad, V Srinivasan, The transition from Bulk to nano as a phase transition, Physica E 33 (2), p.359-362, Jul 2006.
  • K Venkata Saravanan, K.Sudheendran, M.Ghanashyam Krishna, K.C.James Raju and Anil K Bhatnagar Effect of process parameters and post deposition annealing on the optical, structural and microwave dielectric properties of RF magnetron sputtered (Ba0.5,Sr0.5)TiO3 thin films, Vacuum 81 (3), 307-316, (2006).
  • G.K. Prasad, T.P. Radhakrishnan, D. Sravan Kumar, M. Ghanashyam Krishna Ammonia sensing characteristics of thin film based on polyelectrolyte templated polyaniline Sensors and Actuators B 106, 626 (2005).
  • M. Sharath Chandra, M. Ghanashyam Krishna, Hiroyuki Mimata, Jun Kawamata, Takayoshi Nakamura and T. P. Radhakrishnan Laser Induced SHG Decay in a Langmuir-Blodgett Film : Arresting by Polyelectrolyte Templating Advanced Materials, 17, 1937-1941 (2005).
  • D. Pamu, M Ghanashyam Krishna, K C James Raju and A K Bhatnagar.Ambient temperature growth of nanocrystalline titanium dioxide thin films, Solid State Communications. 135, 7-10 (2005).

Patents

  1. K.A.Padmanabhan, M.Ghanashyam Krishna, M.S.R.N. Kiran, Non-stoichiometric titanium nitride films (Awarded European Patent on 10.10.2013: EP No. 2222887 and US Patent No. 8,888,965 B2 on 21/11/2014.

Book Chapters

  1. M Ghanashyam Krishna and Prashant Kumar, Nonlithographic techniques for the nanostructuring of thin films and bulk surfaces, chapter in book titled “Emerging Naotechnologies for manufacturing” edited by M J Jackson and W Ahmed (Elsevier, 2009) pp93-130.
  2. M Ghanashyam Krishna, S Kshirsagar and S P Tewari THz emitters, detectors and sensors: Current status and future prospects, in Photodetectors Edited by Sanka Gateva, (ISBN 978-953-51-0358-5) , pp115-144 (2012).