centre for advanced studies in electronics science & technology


Center for Advanced Studies in Electronics Science and Technology (CASEST)

Prof. Nageswara Rao S. V. S.



University of Hyderabad,Gachibowli,Hyderabad,Telangana,500046
Personal web page
QualificationPh.D. (University of Hyderabad)
Phone: +91 +914023134329, E-mail:

Home Page


Ph.D Physics, University of Hyderabad, Hyderabad .

Thesis title: Ion Beam Characterization and Engineering of Strain in Semiconductor Multi-Layers.

M.Sc(Tech.) Physics with specialization in Electronics and Space Physics, JNTUCE Anantapur, Jawaharlal Nehru Technological University, Hyderabad.

B.Sc (Mathematics, Physics & Electronics), A.M.A.L. College, Anakapalle, Andhra University, Waltair.

Professional Experience

Professor (12/2016 – to date)

Associate Professor (12/2013 – 12/2016)

Reader (12/2010 – 12/2013)

CASEST, School of Physics, University of Hyderabad (UH), Central Univ. (PO), Hyderabad 500 046, India

(Co-Professor-in-charge: Centre for Nanotechnology, UOH, Coordinator, PG Dip. in Telecom., CDVL)

 Assistant Professor (06/2007 – 12/2010)

Department of Physics, Pondicherry University (PU), Pondicherry 605 014, India.

Research Associate (06/2004 – 05/2007)

Department of Physics and Astronomy, Vanderbilt University, BOX NO. 1807B, Nashville, TN–37235, USA 

Dr. K S Krishnan Research Associate (08/2003 – 05/2004)

Nuclear Physics Division, Bhabha Atomic Research Centre, Trombay, Mumbai , MP–400 085, India.

Senior Research Fellow (01/2003 – 08/2003)

School of Physics, University of Hyderabad, Hyderabad, AP–500 046, India.

Research Areas

Electronic Materials, Nano Materials and Devices: Fabrication, Ion beam studies, Radiation damage and Reliability studies.

Member of Professional Bodies

1) Elected Fellow, Telangana Academy of Sciences (TAS), India,

2) Member Institute of Physics, London,

3) EC Member, Ion Beam Society of India and

4) Life member IPA, India.

5) Member, Special Board of Studies: M.Tech (Electronics), Pondicherry University (2008-10).

6) BOS Member, Department of Nuclear Physics, Andhra University (since Mar 2019).

7) Member, School Board, School of Engineering Science and Technology (SEST), UoH (since Nov. 2019).

Sponsored / Consultancy Projects


  1. “Application of Ion Beams to Study and Engineer the Resistive Switching Properties of  Transition Metal-oxides” UFR Project of IUAC, New Delhi, ~ 10 Lakhs  (2018-21) [Co-PI: Prof. M. Ghanashyam Krishna]


  1. “Synthesis and Photoluminescence studies of porous silicon for photonics, photovoltaics, and bio-sensing applications”, UPE-II project, University of Hyderabad, India, 3 Lakhs, as PI (2012) [Investigators: S V S Nageswara Rao (PI) and S. Venugopal Rao]
  2. A study on the influence of energetic ions on bonded hydrogen in semiconductors, UFR Project of IUAC, New Delhi, ~ 5 Lakhs  (2008-11) [Investigator: S V S Nageswara Rao (PI)]
  3. “Nanoparticles/nanostructures assisted surface enhanced Raman spectroscopy: Detection of oxidative stress in a biological system” UPE-II project, University of Hyderabad, India, 10 Lakhs, as PI (2014). [Investigators: S V S Nageswara Rao (PI), S. Venugopal Rao, K.P.M.S.V. Padmasree and Sarada D. Tetali]
  4. “Effects of swift heavy ion irradiation on the structural and optical properties of Si nanoparticles and nanostructures prepared by different methods” UFR Project of IUAC, New Delhi, ~ 6 Lakhs  (2015-18)
  5. “Characterization of defects in semiconductors by Coherent Acoustic Phonon (CAP) spectroscopy and investigation of NV centers in Diamond”, UGC-DAE-CSR-Kalpakkam Node, ~ 7 Lakhs (2015 – 18), [Co-PI: Prof. A. P. Pathak].
  6. “Ion beam studies of hafnium based high-k dielectric materials for metal oxide semiconductor device applications”, UGC-DAE-CSR-Kolkota Node, ~ 1.5 Lakhs (2015 – 18), [Co-PI: Prof. A. P. Pathak].


I. Ph.D. (Ongoing):

A. Electronics Science and Engineering:

1) Mr. Nimmala Arun (Thesis submitted)

2) Mr. G. Sai Prasad 

B. Physics

1) Mr. K. Vinod Kumar

2) Mr. M. Mangababu

3) Mr. Ravi Kanaka

II) Project Assistants:

1) Mr. Arup K R. 

III) Ph.D. (Completed): 


1). Dr. V.S. Vendamani  

2) Dr. N. Manikantha Babu

3) Dr. M. Dhanunjaya

Publications and Patents

Articles in Refereed Journals:

  1. “Effects of swift heavy ion irradiation on the performance of HfO2-based resistive random access memory devices”, N. Arun, L. D. Varma Sangani, K. Vinod Kumar, A. Mangababu, M. Ghanashyam Krishna, A. P. Pathak, and S. V. S. Nageswara RaoJ. Mater Sci: Mater Electron, (In press) (


  1. “Robust and cost-effective silver dendritic nanostructures for SERS-based trace detection of RDX and ammonium nitrate”, V. S. Vendamani, S. V. S. Nageswara Rao, A. P. Pathak and Venugopal Rao Soma, RSC Adv., 10, 44747 (2020). (DOI: 10.1039/d0ra08834j)


  1. “Effects of Initial Grain Size and Laser Parameters on HfO2 Nanoparticles Prepared Using Femtosecond Laser Ablation in Liquids”, A. Mangababu, Ch. Sianglam, B. Chandu, D. K. Avasthi, S. Venugopal Rao, M. Motapothula and S.V.S. Nageswara Rao, J. of Electronic Materials (in press) (  


  1. “Ar Ion Irradiation Effects on the Characteristics of Ru| Pt| n-GaN Schottky Barrier Diodes”, S Kumar, V Kumar Mariswamy, A Kumar, A Kandasami, A Nimmala, SVS Nageswara Rao, V Rajagopal Reddy, K Sannathammegowda, Semiconductors 54, 1641 (2020)


  1. “Nanosecond pulsed laser ablation of Al–Cu–Fe quasicrystalline material: Effects of solvent and fluence”, R Rawat, A Tiwari, N Arun, SVS Nageswara Rao, AP Pathak, Yagnesh Shadangi, NK Mukhopadhyay, S Venugopal Rao, A Tripathi, J. of Alloys and Compounds, 157871 (2020),


  1. “Structural investigations of picosecond laser ablated GaAs nanoparticles in different liquids”, A. Mangababu, G. Sarang Dev, B. Chandu, M.S.S. Bharati, S. Venugopal Rao and S.V.S. Nageswara RaoNano-Structures & Nano-Objects 23, 100509 (2020),


  1. “Synthesis of CuO hollow nanoparticles using laser ablation: effect of fluence and solvents”, Rajesh Rawat, Archana Tiwari, Nimmala Arun, SVS Nageswara Rao, AP Pathak, S Venugopal Rao, Ajay Tripathi, Appl. Phys. A 126, 226 (2020).


  1. “Radiation tolerance, charge trapping, and defect dynamics studies of ALD-grown Al/HfO 2/Si nMOSCAPs”, N Manikanthababu, T Basu, S Vajandar, SVS Nageswara Rao, BK Panigrahi, T Osipowicz, AP Pathak, J Mater Sci: Mater Electron 31, 3312–3322 (2020). .


  1. “Medium Energy Carbon and Nitrogen Ion Beam Induced Modifications in Charge Transport, Structural and Optical Properties of Ni/Pd/n-GaN Schottky Barrier Diodes”, Santosh Kumar, Xiang Zhang , V K Mariswamy, V Rajagopal Reddy, Asokan Kandasami, Arun Nimmala, S V S Nageswara Rao, Jue Tang, S Ramakrishnna and Krishnaveni S, MDPI Materials 13(6), 1299 ( 2020);


  1. “120 MeV Ag Ion irradiation induced intermixing, grain fragmentation in HfO2/GaOx thin films and consequent effects on electrical properties of HfO2/GaOx/Si based MOS capacitors”,  K. Vinod Kumar, N. Arun, A. Mangababu, Sunil Ojha, S.V.S. Nageswara Rao and  A.P. Pathak, Rad. Eff. and Def. in Solids (In press – Jan. 2020).


  1. “Solvents Effect on the Morphology and Stability of Cu/CuO Nanoparticles Synthesized at High Fluence Laser Ablation”, R Rawat, A Tiwari, N Arun, S.V.S. Nageswara Rao, AP Pathak and A Tripathi, Chemistry Select 4 (35), 10471-10482 (2019).


  1. “Effects of ion irradiation on the structural and electrical properties of HfO2/SiON/Si p-metal oxide semiconductor capacitors”, N Manikanthababu, V Saikiran, T Basu, K Prajna, S Vajandar, AP Pathak, BK Panigrahi, T Osipowicz and S.V.S. Nageswara RaoThin Solid Films 682, 156-162 (2019)


  1. “Swift heavy ion irradiation assisted Si nanoparticle formation in HfSiOx nano-composite thin films deposited by RF magnetron sputtering method”, M Dhanunjaya, KV Kumar, N Manikanthababu, S.V.S. Nageswara Rao and AP Pathak, Nucl. Instr. Meth. B 446, 37 (2019)


  1. “Influence of the bottom metal electrode and gamma irradiation effects on the performance of HfO2-based RRAM devices”, N Arun, K Vinod Kumar, A Mangababu, S.V.S. Nageswara Rao and AP Pathak, Rad. Eff. and Def. in Solids 174 (1-2), 66-75 (2019)


  1. “Hafnium oxide nanoparticles fabricated by femtosecond laser ablation in water” M Dhanunjaya, C Byram, VS Vendamani, SV Rao, AP Pathak and S.V.S. Nageswara RaoApplied Physics A 125 (1), 74(2019).


  1. “Femtosecond Laser-Induced, Nanoparticle-Embedded Periodic Surface Structures on Crystalline Silicon for Reproducible and Multi-utility SERS Platforms”, S Hamad, SS Bharati Moram, B Yendeti, G Krishna Podagatlapalli, S.V.S. Nageswara Rao, Anand Prakash Pathak, Mahamad Ahamad Mohiddon and Venugopal Rao Soma, ACS Omega 3 (12), 18420-18432 (2018)


  1. “Commentary Three-Dimensional Hybrid Silicon Nanostructures for Surface Enhanced Raman Spectroscopy based Molecular Detection”, V. S. Vendamani, S. V. S. Nageswara Rao, S. Venugopal Rao, D. Kanjilal and A. P. Pathak, J Phys Astron. 6(2) 150 (2018, in press) [SSN (Print) 2320–6756, ISSN (Online) 2320-6764].


  1. “Grain Fragmentation and Phase Transformations in Hafnium Oxide Induced by Swift Heavy Ion Irradiation”, M. Dhanunjaya, D.K. Avasthi , A. P. Pathak, S.A. Khan, and SVS Nageswara RaoApplied Physics A 124, 585 (2018).


  1. “Electronic excitation induced defect dynamics in HfO2 based MOS devices investigated by in-situ electrical measurements”, N. Manikanthababu, Saumitra Vajandar, N. Arun, A. P. Pathak, Asokan Kandasami, T. Osipowicz, T.  Basu and S.V.S. Nageswara Rao, Appl. Phys. Lett. 112, 131601 (2018)


  1. “Hafnia-based resistive switching devices for non-volatile memory applications and effects of gamma irradiation on device performance”, N Arun, K.V. Kumar, A. P. Pathak, D.K. Avasthi, S. V. S. Nageswara RaoRad. Eff. and Def. in Solids 173, 239 (2018)


  1. “Three-Dimensional Hybrid Silicon Nanostructures for Surface Enhanced Raman Spectroscopy based Molecular Detection.”, V. S. Vendamani, S. V. S. Nageswara Rao, S. Venugopal Rao, D. Kanjilal and A. P. Pathak, J. Appl. Phys. 123, 014301 (2018).


  1. “Ion induced crystallization and grain growth of hafnium oxide nano-particles in thin-films deposited by radio frequency magnetron sputtering”, M Dhanunjaya, SA Khan, AP Pathak, DK Avasthi, S V S Nageswara RaoJ. of Phys. D (Appl. Phys.)50, 505301(2017).


  1. “Energetic ion induced desorption of hydrogen from porous silicon studied by on-line elastic recoil detection analysis”, VS Vendamani, Saif A Khan, M Dhanunjaya, AP Pathak, SVS Nageswara Rao, Microporous and Mesoporous Materials, 246, 81 (2017).


  1. “Ion induced intermixing and consequent effects on the leakage currents in HfO2/SiO2/Si systems”, N Manikanthababu, TK Chan, S Vajandar, V Saikiran, AP Pathak, T Osipowicz, SVS Nageswara RaoApplied Physics A123, 303 (2017). 


  1. “Gamma irradiation-induced effects on the electrical properties of HfO2 – based MOS devices”, N Manikanthababu, N Arun, M Dhanunjaya, SVS Nageswara Rao, AP Pathak, Rad. Eff. and Def. in Solids171, 77 (2016)


  1. “Synthesis and characterization of Ge nanocrystals embedded in high-k dielectric (HfO2) matrix”, V. Saikiran, N. Manikantha Babu, N. Srinivasa Rao, S. V. S. Nageswara Rao and A. P. Pathak, Adv. Mater. Lett., 7(8), 100-150 (2016).


  1. “Depth dependent modification of optical constants arising from H+ implantation in n-type 4H-SiC measured using coherent acoustic phonons”, Andrey Baydin, Halina Krzyzanowska, Munthala Dhanunjaya, S V S Nageswara Rao, Jimmy L Davidson, Leonard C Feldman, Norman H Tolk, APL Photonics 1, 036102 (2016).


  1. “SHI induced effects on the electrical and optical properties of HfO 2 thin films deposited by RF sputtering”, N Manikanthababu, M Dhanunjaya, S V S Nageswara Rao and AP Pathak, Nucl. Instr. Meth. B, 379, 230 (2016).


  1. “Studies on linear, nonlinear optical and excited state dynamics of silicon nanoparticles prepared by picosecond laser ablation” S Hamad, GK Podagatlapalli, R Mounika, S V S Nageswara Rao, AP Pathak, SV Rao, AIP Advances 5 (12), 127127 (2015)


  1. “Blue Luminescent Silicon Nanoparticles Synthesized From Free-Standing Porous Silicon Layer by Ultrasonic Treatment”,  V.S. Vendamani, A.P. Pathak and S.V.S. Nageswara RaoOptical Materials, 48, 66 (2015).


  1. “Fabrication of porous silicon based tunable distributed Bragg reflectors by anodic etching of irradiated silicon”, V.S. Vendamani, Z.Y. Dang, P. Ramana, A.P. Pathak, V.V. Ravi Kanth Kumar, M.B.H. Breese and S.V.S. Nageswara RaoNucl. Instr. Meth. B 358, 105 (2015); doi:10.1016/j.nimb.2015.05.040


  1. “Synthesis of ultra-small silicon nanoparticles by femtosecond laser ablation of porous silicon” V. S. Vendamani,  Syed Hamad, V. Saikiran,  A. P. Pathak, S. Venugopal Rao, V. V. Ravi Kanth Kumar and S. V. S. Nageswara RaoJ. Mate. Sci. 50, 1666 (2015).


  1. “Synthesis, characterization and radiation damage studies of high-k dielectric (HfO2) films for MOS device applications”, N. Manikanthababu, N. Arun, M. Dhanunjaya, V. Saikiran, S. V. S. Nageswara Rao and A. P. Pathak, Rad. Eff. and Def. in Solids170, 207 (2015)DOI: 10.1080/10420150.2014.980259


  1. “One Dimensional Silicon Nanostructures Prepared by Oxidized Porous Silicon under Heat Treatment”, V.S. Vendamani, Anand P Pathak and S V S Nageswara RaoAppl. Surf. Sci., 320, 334 (2014).


  1. “150 MeV Au ion induced modification of Si nanoparticles prepared by laser ablation”, V. Saikiran, V. S. Vendamani, S. Hamad, S. V. S. Nageswara Rao, S. Venugopal Rao and A. P. Pathak, Nucl. Instr. Meth. B 333, 99 (2014)


  1. “Femtosecond Ablation of Silicon in Acetone: Tunable Photoluminescence from Generated Nanoparticles and Fabrication of Surface Nanostructures”, S. Hamad, P. G. Krishna, V. S. Vendamani, S. V. S. Nageswara Rao, A. P. Pathak, S. P. Tewari, S. Venugopal Rao, J. Phys. Chem. C 118, 7139 (2014)


  1. “Ion beam studies of Hafnium based alternate high-k dielectric films deposited on silicon”, N. Manikanthababu, T. K. Chan, A.P. Pathak, G. Devaraju, N Srinivasa Rao, P. Yang, M. B. H. Breese, T. Osipowicz and S.V.S. Nageswara RaoNucl. Instr. Meth. B 332, 389 (2014)


  1. “Structural and Optical properties of Porous Silicon prepared by anodic etching of Irradiated Silicon”, V S Vendamani, Anand P Pathak and S V S Nageswara Rao, Nucl. Instr. Meth. B 315, 188 (2013).


  1. “Measurement of L X-Ray production cross-sections of Au, Ho, Bi and K X-Ray cross-sections of Nb, Sn, Sb by using protons of energy 4 MeV”, Daisy Joseph, S V S Nageswara Rao and S Kailas,  Mapana J Sci., 12, 1, 2013 (ISSN 0975-3303).


  1. “Synthesis and tailoring of GaN nanocrystals at room temperature by RF magnetron sputtering”, G Devaraju, AP Pathak, N Srinivasa Rao, V Saikiran, SVS Nageswara Rao, AI Titov, Rad. Eff. and Def. in Solids, 167, 659 (2012)


  1. “Anharmonic effects on Positron Channeling Angular scans and Dechanneling due to Stackingfaults and Platelets”, V S Vendamani, S. Balamuragan, V Saikiran, A P Pathak and S V S Nageswara Rao,  Rad. Eff. and Def. in Solids167, 594 (2012).


  1. “Ion beam-mixing effects in nearly lattice-matched AlInN/GaN heterostructures by swift heavy ion irradiation”, G Devaraju, SVS Nageswara Rao, N Srinivasa Rao, V Saikiran, TK Chan, T Osipowicz, MBH Breese, AP Pathak, Rad. Eff. and Def. in Solids, 167, 506 ( 2012)


  1. “Reconfiguration and dissociation of bonded hydrogen in silicon by energetic ions”, S.V.S. Nageswara Rao, S.K. Dixit, G. Lüpke, N.H. Tolk and L.C. Feldman, Phys. Rev. B 83, 045204, 2011.


  1. “Energy dependence relations for channeling critical angle and dechanneling probability due to stacking faults”, V.S. Vendaman and S.V.S. Nageswara Rao, Nucl. Instr. Meth. B 268, 2312, 2010.


  1. “Effect of energetic ions on the stability of bond-center hydrogen in silicon”, S.V.S. Nageswara Rao, S.K. Dixit, G. Lüpke, N.H. Tolk and L.C. Feldman,  Phys. Rev. B 75, 235202,  2007.


  1. “Dopant segregation and giant magnetoresistance in manganese-doped germanium”, A. P. Li, K. von Benthem, K. Varga, M. F. Chisholm, S.V.S. Nageswara Rao, S. K. Dixit, L. C. Feldman, A. G. Petukhov, M. Foygel, J. Shen, Zhenyu Zhang and H. H. Weitering. Phys. Rev. B 75201201(R), 2007.


  1. “Vibrational lifetimes and frequency-gap law of hydrogen bending modes in semiconductors”, B. Sun, G. A. Shi, S.V.S. Nageswara Rao, M. Stavola, N. H. Tolk, S. K. Dixit, L. C. Feldman and G. Lu¨pke, Phys. Rev. Lett., 96, 035501, 2006.


  1. “Ion Beam Irradiation and Characterization of GaAs based Heterostructures”, S. Dhamodaran, N. Sathish, A.P. Pathak, S.V.S.N. Rao, A.M. Siddiqui, S.A. Khan, D.K. Avasthi, T. Srinivasan, R. Muralidharan, C. Muntele, D. Ila and D. Emfietzoglou, Nucl. Instr. Meth. B 242, 538, 2006.


  1. Dechanneling of electrons by stacking faults: A model quantum mechanical calculations, S. Dhamodaran, N. Sathish, A.P. Pathak, L.N.S. Prakash Goteti, S.V.S. Nageswara Rao, V. Raghav Rao and D. Emfietzoglou, Nucl. Instr. Meth. B 230, 100, 2005.


  1. “Electronic Sputtering from Semi conducting HOPG: A study of Angular Dependence”, A. Tripathi, S.A. Khan, S.K. Srivastava, M. Kumar, S. Kumar, S.V.S.N. Rao, G.B.V.S. Lakshmi, Azhar. M. Siddiqui, N. Bajwa, H.S. Nagaraja, V.K. Mittal, A. Szokefalvi, M. Kurth, A.C. Pandey, D.K. Avasthi and H.D. Carstanjen, Nucl. Instr. Meth. B 212, 402, 2003.


  1. “Ion Beam Characterization and Engineering of Strain in Semiconductor Multi-Layers”, S.V.S. Nageswara Rao, Anand P. Pathak, Azher M. Siddiqui, D.K. Avasthi, Claudiu Muntele, Daryush Ila, B.N. Dev, R. Muralidharan, F. Eichhorn, R. Groetzschel and A. Turos, Nucl. Instr. Meth. B 212, 442, 2003.


  1. “Development of a Large Area Two Dimensional Position Sensitive Detector Telescope for Material Analysis”, S.V.S. Nageswara Rao, A. Kothari, G.B.V.S. Lakshmi, S.A. Khan, A. Tripathi, Azher M. Siddiqui, Anand P. Pathak and D.K. Avasthi, Nucl. Instr. Meth. B 212, 545, 2003.


  1. “Ion Beam Induced Modification of Lattice Strains in In0.1Ga0.9As/GaAs system”, S.V.S. Nageswara Rao, A.K. Rajam, Azher M. Siddiqui, D.K. Avasthi, T. Srinivasan, Umesh Tiwari, S.K. Mehta, R. Muralidharan, R.K. Jain and Anand P. Pathak, Nucl. Instr. Meth. B 212, 473, 2003.


  1. “The Effect of Temperature on the behavior of Semiconductor Silicon Surface Barrier detector”, Khadke Udaykumar, B.R. Kerur, S.M. Hangodimath, M.T. Lagare, S.K. Srivastava, S.V.S. Nageswara Rao, A. Mandal and D.K. Avasthi, Radiation Measurement 36, 625, 2003.


  1. “Study of 200 MeV Ag ion irradiation effects on the oxygen stoichiometry of La-2125 type superconducting thin films using ERDA”, K.R. Mavani, S. Rayaprol, D.S. Rana, C.M. Thaker, D.G. Kuberkar, J. John, R. Pinto, S.V.S. Nageswara Rao, S.A. Khan, S.K. Srivastava, A. Dogra, Ravi Kumar and D.K. Avasthi, Radiation Measurement 36, 733, 2003.


  1. “Quantum description for the effects of strained layered superlattices on channeling radiation”, S.V.S. Nageswara Rao, L.N.S. Prakash Goteti and A.P. Pathak, Nucl. Instr. Meth. B 202, 312, 2003.


  1. “DE/dx measurements for heavy ions with Z=6-29 in poly corbonate”, A. Sharma, P.K. Diwan, S. Kumar, S.K. Sharma, V.K. Mittal, S.V.S. Nageswara Rao, B. Sannakki, S. Ghosh and D.K. Avasthi, Nucl. Instr. Meth. B 194, 7, 2002.


  1. “Channeling radiation from relativistic electrons and positrons”, S.V.S. Nageswara Rao, L.N.S. Prakash Goteti and  A.P. Pathak, Ind. J. Phys. , 76B(4), 443, 2002.


  1. “Channeling radiation from relativistic electrons – study of stacking faults and dislocations”, A.P. Pathak, L.N.S. Prakash Goteti and S.V.S. Nageswara RaoNucl. Instr. Meth. B 193, 188, 2002.


  1. “Electronic sputtering of Fullerene films by swift heavy ions”, S. Ghosh, D.K. Avasthi, A. Tripathi, S.K. Srivastava, S.V.S. Nageswara Rao, T. Som, V.K. Mittal, F. Gruner and W. Assmann, Nucl. Instr. Meth. B 190, 169, 2002.


  1. “Ion beam studies in strained layer superlattices”, A.P. Pathak, S.V.S. Nageswara Rao, A.M. Siddiqui, G.B.V.S. Lakshmi, S.K. Srivastava, S. Ghosh, D. Bhattacharya, D.K. Avasthi, D.K. Goswami, P. Satyam, B.N. Dev and A. Turos, Nucl. Insrt. Meth. B 193, 319, 2002.


  1. “Ion Chnanneling, high resolution x-ray diffraction and Raman spectroscopy in strained quantum wells”, Azher M. Siddiqui, S.V.S. Nageswara Rao, Anand P. Pathak, V. N. Kulkarni, R. Keshav Murthy, Eric Williams, Daryush Ila, Claudiu Muntele, K. S. Chandrasekaran and B. M. Arora,  J. Appl. Phys. 90, 2824, 2001.


  1. “Defects and Strain studies in semiconductor multilayers”, Anand P. Pathak, S.V.S. Nageswara Rao and Azher M. Siddiqui,  Nucl. Instr. Meth. B 161-163, 487, 2000.




Articles / Chapters in Refereed Books/Series/Volumes:


  1. “Silicon Nanostructures from Bulk and Porous Silicon” , S. Venugopal Rao, G. Krishna Podagatlapalli, V. S. Vendamani, S. Hamad, Anand P. Pathak and  S. V. S. Nageswara RaoEncyclopedia of Nanoscience and Nanotechnology, Edited by H. S. Nalwa, American Scientific Publishers (in Press, 2016).


  1. “Channeling Radiation in Strained Layer Superlattice – A Quantum Mechanical Calculation”, with Anand P. Pathak et. al., Chapter 35, book: Current Developments in Atomic, Molecular and Chamical Physics, edited by: Man Mohan, Kluwer Publications, Dordrecht, The Netherlands (2003).


  1. “Ion beam irradiation effects on the strain in GaAs/InGaAs layers”, S.V.S. Nageswara Rao et al., Physics at Surface and Interface, Ed. BN Dev, World Scientific (2003) pp 158-170 .


  1. “Theory of charged particle probes to modern advanced materials”, with A.P. Pathak et. al., Accelerator Based Research in Basic ad Applied Sciences, Eds. A Roy and D.K. Avasthi, Phoenix Publishers Delhi (2002), pp 173 – 184


  1. “Quantum description of the effects of defects on channeling radiation”, with Anand P. pathak et. al., Atomic and Molecular Physics, Ed. R. Srivastava, Phoenix Delhi (2001), pp 219-228.



Conference Proceedings:


  1. “Metal nanoparticles in dielectric media: Physical vapor deposited HfO2 & Ag multilayers for MOS device and SPR applications”, A Mangababu, N Arun, KV Kumar, AP Pathak, AIP Conference Proceedings 2265 (1), 030271 (2020).  


  1. “Fabrication and Characterization of GaAs Nanoparticles Achieved using Femtosecond Laser Ablation”,  A. Mangababu, G. Sarang Dev, B. Chandu, M.S.S. Bharati, P. Debashish, S. Venugopal Rao, and S.V.S. Nageswara Rao, Materials Today: Proceedings. (in press, May 2020).


  1. “Fabrication of HfO2 based MOS and RRAM devices: A study of thermal annealing effects on these devices”, N Arun, J Prabana, K Vinod Kumar, AP Pathak and S.V.S. Nageswara Rao, AIP Conference Proceedings 2115, 030216 (2019).


  1. “Effects of thermal annealing and gamma irradiation on HfO2 thin films deposited on GaAs”, KV Kumar, N Arun, AP Pathak, S.V.S. Nageswara Rao, AIP Conference Proceedings 2115, 030021 (2019).


  1. “120 MeV Ag ion induced effects in Au/HfO2/Si MOSCAPs”,       N Manikanthababu, K Prajna, AP Pathak and S. V. S. Nageswara Rao, AIP Conference Proceedings 1953 (1), 100061 (2018).


  1. “Formation and local heating effects on the vibrational properties of defects in crystalline silicon”, VS Vendamani, AP Pathak, D Kanjilal, and S. V. S. Nageswara Rao, AIP Conference Proceedings 1942 (1), 120010 (2018).


  1. “Ion induced effects on the dissociation of silicon nanoparticles”, VS Vendamani, SVS Nageswara Rao, S Hamad, S Venugopal Rao and AP Pathak, AIP Conf. Proc. 1832, 050020 (2017).


  1. “Effect of growth rate on crystallization of HfO2 thin films deposited by RF magnetron sputtering”, M Dhanunjaya, N Manikanthababu, AP Pathak and S V S Nageswara Rao, AIP Conf. Proc. 1731, 080071 (2016).


  1. “Femtosecond multiple ablation of Silicon in acetone: Tunable photoluminescence from generated nanoparticles and fabrication of surface nanostructures”, Syed Hamad, G. K. Podagatlapalli, V.S. Vendamani, S.V.S. Nageswara Rao, A.P. Pathak, S.P. Tewari, S. Venugopal Rao, Proceedings of National Laser Symposium (NLS-22), Manipal University, Manipal. 8-11 Jan 2014.


  1. “Ion Beam studies of semiconductor nanoparticles for the integration of optoelectronic devices”, S.V.S. Nageswara Rao et. al. AIP Conf. Series, (Accepted, Oct 2010).


  1. “X-ray production cross-section measurements of As, Ho, Bi, Nb & Sb by protons of energy 4MeV”, with Daisy. Joseph et. al. Solid State Physics (India) Vol. 47, 2004  (in press).


  1. “Ion beam techniques of modification and study of semiconductor heterostructures”, with A.M. Siddiqui et. al. Proce “International Conference on Advances in Surface Treatment: Research & Application”, Eds. TS Sudrashan et. al., Emptek Publishing Chennai (2004), pp 633-641.


  1. “Automation of Channeling Experiment for Lattice Strain Measurements using High Energy Ion beams”, S.V.S. Nageswara Rao et. al. AIP Conf. Series, 680, 94, 2003.


  1. “Ion Beam studies of Strains/Defects in Semiconductor Multi layers”, with Anand P. Pathak et. al. AIP Conf. Series, 680, 593, 2003.


  1. “Ion Beam Characterization and Engineering of Strain in Semiconductor Multilayers” (Thesis paper for best thesis competition), S.V.S. Nageswara Rao et. al. Solid State Physics (India) Vol 46, 2003 (In Press) [Won IPA’s Best PhD Thesis Presentation Award in Solid State Physics – 2002].


  1. “Experimental Facilities at the 6MV Folded Tandem Ion Accelerator at Trombay”, with S.K. Gupta et. al, Proc. DAE Nuclear Physics Symposium 2003 (in press).


  1. “Strain Measurements of semiconductor multilayers by Ion channeling, High resolution XRD and Raman Spectroscopy”, with Azher M. Siddiqui et al., AIP Conf. Series, 576, 476, 2001.


  1. Swift heavy ion mixing in In0.12Ga0.88As/GaAs strained layer superlattice, S.V.S. Nageswara Rao et. al., Solid State Physics (India) 44, 227, 2001.


  1. Description for the effects of strained layer super lattices on channeling radiation, S.V.S. Nageswara Rao et. al., Solid State Physics (India) 44, 505, 2001.


  1. Quantum description of the electron dechanneling by stacking faults, with L.N.S. Prakash Goteti, et. al., Solid State Physics (India) 43, 322, 2000.


  1. Electronic sputtering of Fullerene films by swift heavy ion impact, with S. Ghosh et. al., Solid state physics (India) 43, 280, 2000.


  1. “Energetic ion beams for measurement and modification of strain in strained superlattices”, with D.K. Avasthi et. al., Proceedings of DAE-BRNS workshop on thin films and multilayers, 68-71, oct. 1999.  

Awards and Honours

Best Ph.D. Thesis Presentation Award in Solid-State Physics (2002) of Indian Physics Association.